The newly introduced gallium nitride power amplifier by Comtech has built-in test for over-current, over-temperature, and high-reflected power faults
Comtech PST Corp. has introduced GaN solid-state power amplifier for application in electronic warfare (EW), radar and communications.
The small-form-factor model BME69189-100 gallium nitride (GaN) solid-state power amplifier is also appropriate for applications where space, cooling, and power are limited.
The 6-to-18 GHz AB linear RF amplifier will replace traveling wave tube and microwave power module.
Key features which allows RF amplifier to replace TWT/MPM:
- Ultra wideband operation
- Full power across the entire bandwidth
- Low harmonic distortion
- Low-voltage operation
- Soft failure and graceful degradation
- Integrated RF power reporting
- +28V or +270V DC Input
The amplifier has built-in test for over-current, over-temperature, and high-reflected power faults. ITs DC power and standby is less than 30 Watts. It uses SMA female field-replaceable RF connectors for RF input, and TNC female field-replaceable connectors for RF output.
The RF and microwave device operates in temperatures from -40 to 75 degrees Celsius, and meets MIL-STD-810F for shock and fibration. It measures 8 by 7 by 2.5 inches, and weighs 5.5 pounds.
To know more detailed specifications about the product click here.