GaN Solid-State Power Amplifier for Electronic Warfare


The newly introduced gallium nitride power amplifier by Comtech has built-in test for over-current, over-temperature, and high-reflected power faults

Comtech PST Corp. has introduced GaN solid-state power amplifier for application in electronic warfare (EW), radar and communications.


The small-form-factor model BME69189-100 gallium nitride (GaN) solid-state power amplifier is also appropriate for applications where space, cooling, and power are limited.

The 6-to-18 GHz AB linear RF amplifier will replace traveling wave tube and microwave power module.

Key features which allows RF amplifier to replace TWT/MPM:

  • Ultra wideband operation
  • Full power across the entire bandwidth
  • Low harmonic distortion
  • Low-voltage operation
  • Soft failure and graceful degradation
  • Integrated RF power reporting
  • +28V or +270V DC Input

The amplifier has built-in test for over-current, over-temperature, and high-reflected power faults. ITs DC power and standby is less than 30 Watts. It uses SMA female field-replaceable RF connectors for RF input, and TNC female field-replaceable connectors for RF output.

The RF and microwave device operates in temperatures from -40 to 75 degrees Celsius, and meets MIL-STD-810F for shock and fibration. It measures 8 by 7 by 2.5 inches, and weighs 5.5 pounds.

To know more detailed specifications about the product click here.



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